Berlin 2015 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 65: Focus Session (DS with HL): Oxide semiconductors I

HL 65.7: Vortrag

Donnerstag, 19. März 2015, 12:00–12:15, H 2032

Nitrogen doping in tin dioxide thin film grown by chemical vapor deposition — •Jie Jiang, Yinmei Lu, Benedikt Kramm, and Bruno K Meyer — I. Physics Institute, Justus-Liebig-University Giessen, Giessen, Germany

As a direct band gap semiconductor, tin dioxide (SnO2) is a promising candidate for next generation ultraviolet light emitting diodes (LEDs) and photo detectors, due to its large band gap of 3.6 eV, and high carrier mobility of about 250 cm2/Vs at room temperature. An essential step to fabricate SnO2-based optoelectronic devices is to obtain high quality p-type SnO2 films. Nitrogen could be an excellent p-type dopant in SnO2 owing to its suitable electronegativity and ion size, high solubility limit, and non-toxicity. At the same time, only a few experimental investigations were performed on N-doped SnO2. For this reason, we deposit the N-doped SnO2 thin films on c-sapphire substrates via chemical vapor deposition (CVD), using SnI2 powder and O2 and NH3 gas as source materials. Both undoped and N-doped samples are annealed at different temperature for a short time using a rapid thermal processing. The crystal structure, electrical properties and optical properties of the films were measured and investigated by X-ray diffraction (XRD), Hall effect measurements, optical transmittance, secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS), respectively. The effect of short-time annealing on structural, optical and electrical properties is also analyzed.