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HL: Fachverband Halbleiterphysik

HL 71: New concepts and new materials

HL 71.1: Vortrag

Donnerstag, 19. März 2015, 10:15–10:30, EW 201

YMnO₃ - based MIS structure with a selective, capacitive photo-detecting properties — •Agnieszka Bogusz^1,2, Om S. Choudhary², Ilona Skorupa¹, Danilo Bürger², Alexander Lawerenz³, Oliver G. Schmidt^2,4, and Heidemarie Schmidt² — ¹Institute Of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf — ²Department of Materials for Nanoelectronics, Chemnitz University of Technology — ³CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH — ⁴Institute for Integrative Nanosciences, IFW-Dresden

This work investigates the YMnO₃/Si₃N₄/p−Si structures in terms of novel, capacitance-based photo-detecting properties. Photocapacitance-voltage (C-V) characteristics of the YMnO₃/Si₃N₄/p−Si structures have been determined at room temperature for a wide spectral range (λ= 300-980 nm). C-V characteristics indicate a charge trapping process which is used as the basis for novel approach to photodetectors. Our model discusses the immobilization of otherwise mobile charges in Si₃N₄ when the negative polarization charge of the multiferroic YMnO₃ [1] is at the YMnO₃/Si₃N₄ interface. The observed capacitance minima are well-defined by the direction of bias ramp. Voltages corresponding to these minima were further used as a reference point for a read out of capacitance in retention and optical selectivity tests. Results indicate that investigated structures exhibit a good photo-sensitivity of red light and the retention properties are non-volatile for one capacitance branch. [1]B.B. Van Aken et al. Nature Mater.3,164(2004)