Berlin 2015 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 72: Quantum wires

HL 72.5: Vortrag

Donnerstag, 19. März 2015, 11:15–11:30, EW 203

Optical characterization of high-periodicity InGaAs-InAlAs-based core-shell nanowire arrays — •Maximilian Speckbacher¹, Julian Treu¹, Thomas Stettner¹, Stefanie Morkötter¹, Markus Döblinger², Sonja Matich¹, Kai Saller¹, Max Bichler¹, Markus Christian Amann¹, Jonathan Finley¹, Gerhard Abstreiter^1,3, and Gregor Koblmüller¹ — ¹Walter Schottky Institut and Physik Department, TU München, Garching, Germany — ²Department of Chemistry, Ludwig-Maximilians-Universität München, Munich, Germany — ³TUM Institute for Advanced Study, Garching, Germany

In_1−xGa_xAs nanowires (NWs), site-selectively grown by molecular beam epitaxy (MBE) on Si(111) substrates and passivated insitu with an according lattice matched In_1−xAl_xAs shell, were analyzed in depth using micro-photoluminescence (µ-PL). Varying both Ga- as well as Al-content allows for effective bandgap engineering, tuning the peak emission over a broad range across the important telecommunication regime. The core-shell NWs significantly enhance peak intensities compared to the unpassivated case with emission even up to room-temperature. This opens numerous opportunities for advanced NW-based heterostructures, such as integrated nanophotonic sources on Si (for hybrid III/V-Si photonics) and NW-based photovoltaics.