Berlin 2015 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 72: Quantum wires
HL 72.5: Talk
Thursday, March 19, 2015, 11:15–11:30, EW 203
Optical characterization of high-periodicity InGaAs-InAlAs-based core-shell nanowire arrays — •Maximilian Speckbacher1, Julian Treu1, Thomas Stettner1, Stefanie Morkötter1, Markus Döblinger2, Sonja Matich1, Kai Saller1, Max Bichler1, Markus Christian Amann1, Jonathan Finley1, Gerhard Abstreiter1,3, and Gregor Koblmüller1 — 1Walter Schottky Institut and Physik Department, TU München, Garching, Germany — 2Department of Chemistry, Ludwig-Maximilians-Universität München, Munich, Germany — 3TUM Institute for Advanced Study, Garching, Germany
In1−xGaxAs nanowires (NWs), site-selectively grown by molecular beam epitaxy (MBE) on Si(111) substrates and passivated insitu with an according lattice matched In1−xAlxAs shell, were analyzed in depth using micro-photoluminescence (µ-PL). Varying both Ga- as well as Al-content allows for effective bandgap engineering, tuning the peak emission over a broad range across the important telecommunication regime. The core-shell NWs significantly enhance peak intensities compared to the unpassivated case with emission even up to room-temperature. This opens numerous opportunities for advanced NW-based heterostructures, such as integrated nanophotonic sources on Si (for hybrid III/V-Si photonics) and NW-based photovoltaics.