Berlin 2015 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 75: Transport: Quantum dots, quantum wires, point contacts 1 (TT with HL)
HL 75.7: Talk
Thursday, March 19, 2015, 12:30–12:45, A 053
coherent single charge transport in MBE-grown InSb nanowire — •ning kang1, sen li1, dingxun fan1, yuqing huang1, libing wang1, philippe caroff2, and hongqi xu1,2 — 1Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, P. R. China. — 2Solid State Physics, Lund University, Box 118, S-221 00 Lund, Sweden
InSb nanowire have unique properties, such as a narrow bandgap, strong spin-orbit interaction, large bulk mobility and a small effective mass. Here, we report fabrication and low-temperature electrical transport studies of InSb nanowires grown by MBE. Individual nanowire devices exhibit Coulomb blockade oscillations characteristic of single charge transport on length scales up to 700 nm. Detailed finite-bias transport measurements demonstrate coherent electron transport through discrete quantum levels. In the few electron regime, strong signatures of higher order inelastic cotunneling occur which can directly be assigned to excited states. With this spectroscopy we extract the main characteristics of a single InSb nanowire, namely, the Lande factor and the the magnitude of the spin-orbit interaction. We also present initial experimental studies of devices composed of superconductor in proximity to single InSb nanowire. We observed gate-tunable supercurrent flowing through the InSb nanowire and multiple Andreev reflection characteristics. Our results demonstrate that the InSb nanowires can provide an ideal platform to exploring phase coherence quantum transport and topological electronics in a solid state system.