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HL: Fachverband Halbleiterphysik
HL 79: Quantum information systems: Si vacancies and NV centers (with TT)
HL 79.1: Vortrag
Donnerstag, 19. März 2015, 15:00–15:15, ER 164
Spin Physics of vacancy-related defects in silicon carbide — •Michel Bockstedte1,2 and Felix Schütz1 — 1Lst. Theor. Festkörperphysik, Friedrich-Alexander Universität Erlangen-Nürnberg, 91058 Erlangen, Germany — 2FB Materialwissenschaften & Physik, Universität Salzburg, 5020 Salzburg, Austria
SiC as a semi conductor fullfills all necessary requirements1 for
implenting qubits via defect electron spins, such as the silicon vacancy, the
di-vacancy or a complex of a silicon vacancy and a nitrogen impurity. The
spin-selective fluorescence in contrast to the prototypical NV-center in
diamond operates in the spectral range favorable for telecom
applications. Spin-manipulation of the intrinsic centers was demonstrated even at room temperature.2,3 For the silicon vacany in SiC inter system crossings (ISCs) from high to yet unknown low spin states govern the spin-relaxation. By DFT and a DFT-based CI-hamiltonian we analyze the spin physics of the defect in 4H-SiC. Experimentally observed luminescence lines can be assigned to the inequivalent defect sites corobarating the experimental findings. Owing to the spin (S=3/2) and a stronger electron-phonon coupling in the excited state, ISCs destinct from the NV-center are predicted.
1 J. R. Weber et al., PNAS 107, 8513 (2010).
2 F. Koehl et al.,
Nature479, 84 (2011).
3 V. A. Soltamov et al.,
Phys. Rev. Lett. 108 226402 (2012)