Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 79: Quantum information systems: Si vacancies and NV centers (with TT)
HL 79.4: Vortrag
Donnerstag, 19. März 2015, 15:45–16:00, ER 164
Charge state control of nitrogen-vacancy centers in diamond — •Patrick Simon1, Moritz V. Hauf1, Ankit Rathi1, Philipp Neumann2, Helmut Fedder2, Jörg Wrachtrup2, Friedemann Reinhard1,2, and Jose A. Garrido1 — 1Walter Schottky Institut, Physik-Department,Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany — 23. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany
The nitrogen-vacancy (NV) defect in diamond is a promising candidate for quantum information processing or sensing purposes. In most applications reliable control of the charge state of the NV is of utmost importance.
In this work we demonstrate that the charge state of NV centers can be controlled using an in-plane gated diamond nanostructure based on selective surface termination. Applying a gate voltage changes the band bending at the hydrogen terminated diamond surface such that reversible charge state switching is enabled. We observed full control of NVs from a non-fluorescent state, potentially NV+, across NV0 to NV−