Berlin 2015 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 79: Quantum information systems: Si vacancies and NV centers (with TT)
HL 79.5: Talk
Thursday, March 19, 2015, 16:00–16:15, ER 164
Investigating the positively charged nitrogen-vacancy center in diamond as a long lived quantum memory — •Matthias Pfender1, Nabeel Aslam1, Christian Burk1, Denis Antonov1, Sebastian Zaiser1, Helmut Fedder1, Philipp Neumann1, Patrick Simon2, José A. Garrido2, Martin Stutzmann2, and Jörg Wrachtrup1 — 13. Physikalisches Institut, Universität Stuttgart — 2Walter Schottky Institut, Technische Universität München
The nitrogen-vacancy defect in diamond is one of the major candidates for a solid-state quantum processor. Its electron spin can be readout and initialized optically. Adjacent nuclear spins (e.g. 14N, 15N, 13C) can be employed as inherently robust qubits [1], readout is facilitated via the electron spin in a QND measurement with T1 lifetimes of several minutes. However, for strongly coupled nuclear spins, the coherence time is limited by the T1 lifetime of the electron spin (≈ 5ms). In Si:P, this obstacle could be overcome by ionizing the P donor to a spinless charge-state [2]. In this work, we employ in-plane gate structures to deterministically switch the charge state of near-surface NVs from NV− over NV0 to NV+ [3], while investigating the electron spin properties using the nitrogen nuclear spin as a probe. Since the positive charge state has no unpaired electrons, the nuclear spin coherence time is prolonged beyond the 5ms imposed by the NV− electron spin.
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