Berlin 2015 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 81: Heterostructures and interfaces

HL 81.11: Vortrag

Donnerstag, 19. März 2015, 17:45–18:00, EW 201

Towards enhancement mode AlInN/AlN/GaN FETs using p-GaN cap layers — •Jonas Hennig, Armin Dadgar, Hartmut Witte, Juergen Blaesing, and Andre Strittmatter — Otto-von-Guericke Universität Magdeburg, Fakultät für Naturwissenschaften, Universitätsplatz 2, 39104 Magdeburg

With their large electric breakdown-field GaN based field effect transistors are ideally suited for high power electronics for voltages above 600 V and currents up to hundreds of amperes. The abrupt spontaneous polarization change at the AlInN/GaN heterojunction produces large sheet carrier concentrations, higher than for conventional AlGaN/GaN heterojunctions which results in a highly conductive channel even without bias. For safety reasons, however, these devices are required to operate in normally-off mode. By introducing a magnesium doped GaN cap layer on top of the AlInN the resulting electric field may deplete the channel under the gate region from charge carriers at zero gate bias. We currently conduct studies on p-GaN/AlInN/AlN/GaN FET structures grown on Si (111) by MOVPE and will present first results on the impact on FET performance. The analyses are carried out by XRD, AFM, Hall-effect, and current-voltage measurements.