Berlin 2015 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 81: Heterostructures and interfaces
HL 81.9: Talk
Thursday, March 19, 2015, 17:15–17:30, EW 201
Time-resolved in situ spectroscopy during formation of single-domain GaP/Si(100) heterointerfaces — •Oliver Supplie1,2, Matthias May1,2, Andreas Nägelein1, Gabi Steinbach3, Oleksandr Romanyuk4, Frank Grosse5, Peter Kleinschmidt1,2, Sebastian Brückner1,2, and Thomas Hannappel1,2 — 1TU Ilmenau, FG Photovoltaik — 2Helmholtz-Zentrum Berlin, Solar Fuels — 3Helmholtz-Zentrum Dresden-Rossendorf — 4Institute of Physics, Academy of Sciences of the Czech Republic — 5Paul-Drude Institut, Berlin
Though III-V/Si(100) heterointerfaces are essential for future epitaxial high-performance devices, their atomic structure is a historic open question. We study the formation of the GaP/Si(100) heterointerface time-resolved with reflection anisotroppy spectroscopy during pulsed GaP nucleation on almost single-domain Si(100) surfaces [1] in CVD ambient. A terrace-related dielectric anisotropy evolves about 100 meV below the E1 critical point energy of silicon and agrees well with a GaP/Si(100) interface dielectric anisotropy (IDA) calculated from thicker GaP epilayers on Si(100).[2] X-ray photoelectron spectroscopy reveals a chemically shifted contribution of the P and Si emission lines, which quantitatively correspond to about one monolayer and establish similarly quick as the IDA.[2] We attribute this contribution to Si–P bonds at the heterointerface,[2] which were suggested recently.[3]
[1] Brückner et al., Phys. Rev. B 86 : 195310, 2012.
[2] Supplie et al., J. Phys. Chem. Lett. submitted, 2014.
[3] Supplie et al., Phys. Rev. B 90 : 235301, 2014.