Berlin 2015 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 83: Focus Session: Oxide semiconductors II (DS with HL)

HL 83.5: Vortrag

Donnerstag, 19. März 2015, 16:15–16:30, H 2032

Angle dependent Raman investigations of the different phases of Sn_xO_y — •Christian T. Reindl, Martin Becker, Bruno K. Meyer, and Peter J. Klar — I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany

The two widely known tin oxide phases SnO₂ and SnO are easily distinguished by examining their Raman spectra. Such Raman spectra contain information about the crystal structure and orientation as well as its quality, impurities, etc. Ion beam sputtered samples of SnO₂ and SnO with well-defined orientations are investigated using rotational Raman spectroscopy, a technique where the sample is rotated in plane with respect to the incident laser polarization. The intensity of the scattered light is analyzed for different polarizations with respect to the incident light. The data obtained is used to confirm the assignments of Raman modes appearing in the spectra of SnO₂ and SnO and to determine the values of the corresponding Raman tensor elements. Samples grown in the regime between the formation of these two phases yield completely different Raman spectra implies the formation of a third tin oxide phase in this intermediate regime. We present first identification of the Raman modes of this additional Sn_xO_y phase. Furthermore, naturally grown crystals are investigated and compared to the samples grown by ion beam sputtering and chemical vapor deposition.