Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 83: Focus Session: Oxide semiconductors II (DS with HL)
HL 83.7: Vortrag
Donnerstag, 19. März 2015, 17:15–17:30, H 2032
Defect studies on In2O3 thin films grown by pulsed laser deposition — •Florian Schmidt, Manuel R. Lindel, Daniel Splith, Stefan Müller, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Abteilung Halbleiterphysik, Linnéstraße 5, 04103 Leipzig
In2O3 is a promising oxide semiconducting material for applications in transparent electronics. Highly tin-doped In2O3 for instance is already commercially exploited as transparent conducting electrode. However, less is known on the defect structure of the host material. The fabrication of rectifying Schottky contacts on In2O3 was reported recently [1] and opens up the possibility to apply space-charge spectroscopic methods, such as thermal admittanz spectroscopy (TAS) or deep-level transient spectroscopy (DLTS).
We investigated point defects in both undoped In2O3 and compensated In2O3:Mg thin films by means of TAS and DLTS. While a defect level with a thermal activation energy Et of approximately 200 meV and an apparent capture cross-section σn of about 10−16 cm2 was found both materials another deep defect with Et ≈ 90 meV and σn ≈ 5 × 10−18 cm2 was exclusively found in the Mg-doped sample.
[1] H. von Wenckstern et al., APL Materials 2, 046104 (2014).