Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 89: Graphene: Electronic structure (O with HL/TT)

HL 89.3: Talk

Thursday, March 19, 2015, 15:30–15:45, MA 041

Graphene on weakly interacting metals: Dirac states vs. surface states — •Wouter Jolie, Fabian Craes, and Carsten Busse — II. Physikalisches Institut, Universität zu Köln, Germany

The epitaxial growth of graphene and other two-dimensional materials on metal surfaces has become a well-established procedure and is extensively used for studies of the electronic properties of two-dimensional materials using surface science methods. However, the substrate itself can have a significant contribution to these properties. We demonstrate this on three different systems: graphene on a thick silver film on Ir(111), graphene on one monolayer of silver on Ir(111), and graphene on Ir(111). We explore the interplay between the states of the substrate (in form of nearly free surface states) and the states of the two-dimensional material on top (in form of graphenes' Dirac fermions) with scanning tunneling spectroscopy, a technique sensitive to the local density of states of the surface. We show that, when present, the surface state represents the dominant contribution in form of Friedel oscillations and confined states on graphene quantum dots. We compare these findings with a system with suppressed surface states where a clear feature of graphene is found in the density of states.