Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 9: Quantum dots: Optical properties

HL 9.2: Talk

Monday, March 16, 2015, 10:15–10:30, EW 203

Processing and optical characterisation of InGaN quantum dots with AlGaN barrier layers — •Elahe Zakizadeh, Carsten Laurus, Stephan Figge, Kathrin Sebald, and Jürgen Gutowski — Institute of Solid State Physics, University of Bremen, Germany

InGaN quantum dots are promising candidates to realize single photon emission at elevated temperatures due to their large bandgap and high exciton binding energies. Single line emission from InGaN quantum dots was already observed up to 150 K.

Here, we report on samples for which an additional AlGaN barrier layer was grown below the InGaN quantum dot layer by metal organic vapor phase epitaxy in order to increase the carrier confinement which might result in single photon emission at elevated temperatures.

For single quantum dot spectroscopy the optically excited quantum dots density must be reduced. One possibility is the creation of shadow masks on the sample. In this contribution different lithographic methods for producing the shadow masks and micro-photoluminescence measurements on the InGaN quantum dots will be presented.