Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 9: Quantum dots: Optical properties
HL 9.4: Vortrag
Montag, 16. März 2015, 10:45–11:00, EW 203
Neutral and charged biexciton-exciton-cascade of near-telecom wavelength MOVPE-grown InGaAs QDs — •Jan Kettler, Matthias Paul, Fabian Olbrich, Katharina Zeuner, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und funktionelle Grenzflächen (IHFG), Universität Stuttgart, Allmandring 3, 70569 Stuttgart
The implementation of large-scale fiber-based quantum information networks requires sources of single and entangled photons that show little absorption and dispersion in standard glass fibers. InGaAs quantum dots (QDs) have shown to be bright and flexible sources of non-classical light with typical emission wavelengths below 1 µm.
Here we demonstrate InGaAs QDs grown by industrial standard metal-organic vapor phase epitaxy (MOVPE) that are covered with a thin Indium-rich layer, leading to red-shifted emission wavelengths. The QDs can be grown with an ultra-low lateral density (<107 cm−2) and show single-photon emission at the telecom O-band (1.3 µm). We further investigate cascaded photon emission from the biexciton-exciton cascade which is a prerequisite to the generation of polarization-entangled photon pairs.