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HL: Fachverband Halbleiterphysik

HL 9: Quantum dots: Optical properties

HL 9.6: Vortrag

Montag, 16. März 2015, 11:15–11:30, EW 203

Infrared transmission spectroscopy to measure intersublevel spacings in InAs self-assembled quantum dots — •Shovon Pal^1,2, Sascha R. Valentin¹, Nadezhda Kukharchyk¹, Hanond Nong², Alireza B. Parsa³, Gunther Eggeler³, Arne Ludwig¹, Nathan Jukam², and Andreas D. Wieck¹ — ¹Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Germany. — ²AG Terahertz Spektroskopie und Technologie, Ruhr-Universität Bochum, Germany. — ³Institut für Werkstoffe, Ruhr-Universität Bochum, Germany.

For over a decade, zero-dimensional semiconductor quantum dots have broadened the horizon of device applications from simple electronic memories to many optoelectronic devices like single photon emitter and photodetectors. The working principle of all these devices relies on the quantization resulting from confinement in such nanostructures. In this study, we employ Fourier transform infrared transmission spectroscopy to investigate the intersublevel spacings in the conduction band of self-assembled InAs quantum dots. Epitaxial, complementary-doped and semi-transparent electrostatic gates are grown on top of the sample within the ultra high vacuum conditions of the molecular beam epitaxy. These gates enable voltage tuning of the device with a better optical transmission [1].

[1] S. Pal et al., Infrared transmission spectroscopy of charge carriers in self-assembled InAs quantum dots under surface electric fields, J. Phys.: Condens. Matter 26 (2014) 505801.