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15:00 |
HL 90.1 |
Nanosecond laser-induced phase transitions in pulsed laser deposition-deposited GeTe films — •Xinxing Sun, Erik Thelander, Jürgen W. Gerlach, and Bernd Rauschenbach
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15:15 |
HL 90.2 |
Growth of Germanium Telluride Thin Films on Passivated Silicon Surfaces by Molecular Beam Epitaxy — •Rui Ning Wang, Jos Boschker, Raffaella Calarco, Jamo Momand, and Bart Kooi
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15:30 |
HL 90.3 |
Epitaxial and textured Ge-Sb-Te phase-change thin films investigated by Cs-corrected STEM — •Ulrich Roß, Andriy Lotnyk, Erik Thelander, and Bernd Rauschenbach
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15:45 |
HL 90.4 |
Optical and structural dynamics of the photoinduced phase transition of GST — •Lutz Waldecker, Timothy Miller, Roman Bertoni, Simon Wall, and Ralph Ernstorfer
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16:00 |
HL 90.5 |
Static and dynamic THz spectroscopy of epitaxially grown GeTe-Sb2Te3 alloys — •Valeria Bragaglia, Karsten Holldack, and Raffaella Calarco
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16:15 |
HL 90.6 |
Memristive Hebbian Plasticity: Device requirements for the emulation of Hebbian plasticity based on memristive devices — •Martin Ziegler, Mirko Hansen, Marina Ignatov, Thorsten Bartsch, and Hermann Kohlstedt
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16:30 |
HL 90.7 |
Memristive Tunnel Junctions — •Mirko Hansen, Martin Ziegler, Thomas Mussenbrock, Sven Dirkmann, and Hermann Kohlstedt
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16:45 |
HL 90.8 |
Emulation of neuronal functionality by using a VO2-based oscillator circuit — •Marina Ignatov, Martin Ziegler, Mirko Hansen, Adrian Petraru, and Hermann Kohlstedt
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17:00 |
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15 min. break.
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17:15 |
HL 90.9 |
Effect of oxygen engineering and doping on resistive switching in HfO2 based RRAM devices grown by MBE — •S.U. Sharath, Jose Kurian, Erwin Hildebrandt, Philipp Komissinskiy, Thomas Bertaud, Christian Walczyk, Pauline Calka, Thomas Schroeder, and Lambert Alff
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17:30 |
HL 90.10 |
BiFeO3-based resistive switching cells with flexible rectifying contact — •Tiangui You, Nan Du, Stefan Slesazeck, Thomas Mikolajick, Guodong Li, Danilo Bürger, Ilona Skorupa, Hartmut Stöcker, Barbara Abendroth, Andreas Beyer, Kerstin Volz, Oliver G. Schmidt, and Heidemarie Schmidt
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17:45 |
HL 90.11 |
Reversible Changes Induced by Liquid Electrolyte Gating in the WO3 Electronic Structure — •Carlos E. ViolBarbosa, Julie Karel, Simone G. Altendorf, Janos Kiss, Yuki Utsumi, Mahesh G. Samant, Liu Hao Tjeng, Claudia Felser, and Stuart S. P. Parkin
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18:00 |
HL 90.12 |
Resistive switching of polycrystalline, multiferroic YMnO3 thin films — •Agnieszka Bogusz, Sławomir Prucnal, Daniel Blaschke, Ilona Skorupa, Danilo Bürger, Oliver G. Schmidt, and Heidemarie Schmidt
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18:15 |
HL 90.13 |
Kinetic Monte-Carlo simulations of resistive switching in silver doped titanium dioxide thin films — Sven Dirkmann, Jan Trieschmann, Mirko Hansen, Martin Ziegler, Hermann Kohlstedt, and •Thomas Mussenbrock
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18:30 |
HL 90.14 |
Tailoring the electrical properties of a TiO2 layer by ion-beam irradiation for memristive applications — •Daniel Blaschke, Agnieszka Bogusz, René Hübner, Franziska Nierobisch, Vikas Rana, Andrea Scholz, Sibylle Gemming, and Peter Zahn
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