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HL: Fachverband Halbleiterphysik

HL 90: Phase change / resistive switching (DS with HL)

HL 90.10: Vortrag

Donnerstag, 19. März 2015, 17:30–17:45, H 0111

BiFeO3-based resistive switching cells with flexible rectifying contact — •Tiangui You¹, Nan Du¹, Stefan Slesazeck², Thomas Mikolajick^2,3, Guodong Li⁴, Danilo Bürger¹, Ilona Skorupa¹, Hartmut Stöcker⁵, Barbara Abendroth⁵, Andreas Beyer⁶, Kerstin Volz⁶, Oliver G. Schmidt^1,4, and Heidemarie Schmidt¹ — ¹TU Chemnitz — ²NaMLab gGmbH Dresden — ³TU Dresden — ⁴IFW Dresden — ⁵TU Bergakademie Freiberg — ⁶Philipps-Universität Marburg

Nonvolatile resistive switching in BiFeO3 (BFO) has attracted increasing attention. However, the underlying resistive switching mechanism is still controversial which restricts its application in nonvolatile memory[1] and logics[2]. Here we develop a model on modifiable Schottky barrier height and elucidate the physical origin underlying resistive switching in Au-BFO-Pt/Ti resistive switching cells containing mobile oxygen vacancies.[3] Increased switching speed is possible by applying a large amplitude writing pulse as the migration of mobile oxygen vacancies is tunable by both the amplitude and length of the writing pulse. The local resistive switching has been investigated by conductive atomic force microscopy and exhibits the capability of down-scaling the resistive switching cell to the grain size.

[1] Y. Shuai, et al., J. Appl. Phys. 2011, 109, 124117

[2] T. You, et al., Adv. Funct. Mater. 2014, 24, 3357

[3] T. You, et al., ACS Appl. Mater. Interfaces 2014, 6, 19758