Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 90: Phase change / resistive switching (DS with HL)

HL 90.14: Talk

Thursday, March 19, 2015, 18:30–18:45, H 0111

Tailoring the electrical properties of a TiO₂ layer by ion-beam irradiation for memristive applications — •Daniel Blaschke¹, Agnieszka Bogusz¹, René Hübner¹, Franziska Nierobisch¹, Vikas Rana³, Andrea Scholz¹, Sibylle Gemming^1,2, and Peter Zahn¹ — ¹Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf — ²Chair of Scale-bridging Materials Modeling, Physics Departement, TU Chemnitz — ³Peter Grünberg Institut, Forschungszentrum Jülich

Reactively sputtered TiO₂ thin films on Pt/Ti/SiO₂/Si substrates were irradiated with low energy Ar⁺ ions of different energies to create surface or bulk modifications in the material. Furthermore, the fluence was varied to optimize the level of the modifications, which are e.g. amorphization, surface smoothing, and preferential sputtering of oxygen. These effects were detected by TEM, AFM and supported by TRIDYN simulations, respectively. The impact of these changes on the electrical properties of the TiO₂ layers was monitored by I-V and C-V measurements in top-bottom geometry with Pt, as well as Ti/Pt top contacts. The results indicate a transition from a Schottky-like behavior of the Pt/TiO₂ interface to an ohmic one with increasing fluence, which is very similar to the behavior of a Ti/TiO₂ interface. Furthermore, the capacity of the complete MIM stack increases with fluence, which points to a reduced effective thickness of the dielectric TiO₂ layer after irradiation.

The project is funded by the Initiative and Networking Fund of the Helmholtz Association (Virtual Institute Memriox, VH-VI-422).