Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 90: Phase change / resistive switching (DS with HL)
HL 90.2: Vortrag
Donnerstag, 19. März 2015, 15:15–15:30, H 0111
Growth of Germanium Telluride Thin Films on Passivated Silicon Surfaces by Molecular Beam Epitaxy — •Rui Ning Wang1, Jos Boschker1, Raffaella Calarco1, Jamo Momand2, and Bart Kooi2 — 1Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany — 2University of Groningen, Zernike Institute for Advanced Materials, Groningen, The Netherlands
As a phase change material, and as a ferroelectric semiconductor, germanium telluride is worth investigating both from the fundamental and technological point of view. And especially for fundamental research, the ability to produce GeTe thin films of great crystalline quality is of prime importance.
Epitaxial growth of GeTe on Si(111)-(7x7) by molecular beam epitaxy was first demonstrated by Giussani et al. [1] and it has been recently shown that the crystalline quality of such GeTe thin films can be significantly improved by growing on a passivated Si(111)-(√3×√3)R30∘-Sb surface [manuscript accepted in J. Phys. Chem. C 19/11/2014].
To better understand the role of the surface passivation in the epitaxy of GeTe, growth on the hydrogen passivated Si(111)-(1x1)-H surface was investigated as well. In this presentation, the growth of GeTe on these different silicon surfaces is reported and compared between each other.
[1] A. Giussani et al., Phys. Status Solidi B, vol. 249, no. 10, pp. 1939-1944, Oct. 2012.