Berlin 2015 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 90: Phase change / resistive switching (DS with HL)
HL 90.6: Talk
Thursday, March 19, 2015, 16:15–16:30, H 0111
Memristive Hebbian Plasticity: Device requirements for the emulation of Hebbian plasticity based on memristive devices — •Martin Ziegler1, Mirko Hansen1, Marina Ignatov1, Thorsten Bartsch2, and Hermann Kohlstedt1 — 1Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel — 2Klinik für Neurologie, Universitätsklinikum Schleswig-Holstein, Christian-Albrechts-Universität zu Kiel
Essential requirements of individual memristive devices for the emulation of Hebbian plasticity in neuromorphic circuits are defined and discussed. Memristive devices based on ionic and exclusively electronic mechanisms are explored. The ionic devices consist of the layer sequence metal/isolator/metal and represent today's most popular devices. The electronic device is a MemFlash-cell. The MemFlash-cell is based on a conventional floating gate transistor with a diode configuration wiring scheme exhibiting a memristive (pinched) I-V characteristic. The electric characteristics of both types of devices are experimentally and theoretically explored with a focus on artificial synaptic plasticity mechanisms. A phenomenological plasticity model suitable for memristive devices is presented, based on advanced novel learning rules, which provide Hebbian plasticity in accordance to the Bienenstock-Cooper-Munro(BCM) rule.