Berlin 2015 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 90: Phase change / resistive switching (DS with HL)
HL 90.7: Talk
Thursday, March 19, 2015, 16:30–16:45, H 0111
Memristive Tunnel Junctions — •Mirko Hansen1, Martin Ziegler1, Thomas Mussenbrock2, Sven Dirkmann2, and Hermann Kohlstedt1 — 1AG Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel, Germany — 2Lehrstuhl für Theoretische Elektrotechnik, Fakultät für Elektrotechnik und Informationstechnik, Ruhr-Universität Bochum, Germany
We present results on a device which consists of a tunnel barrier and a thin niobium oxide layer in between two metal electrodes.
By using the well established niobium/aluminium technology to fabricate aluminium oxide tunnel junctions with a smooth interface, we are able to fabricate very thin (<3 nm) and highly resistive niobium oxides layers. The homogeneous change in resistance (Roff/ Ron > 100) and RxA vs. A plots suggest an area-dependent and non-filamentary switching mechanism, which is explained by taking the interface effects at the tunnel barrier and the top electrode into account.
The memristive tunnel junctions were optimized for the use in neuromorphic circuits and were fabricated on 4" wafers using standard optical lithography, (reactive) DC sputtering and wet etching.