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15:45 |
HL 93.1 |
Bond stretching force constants in (In,Ga)P — •Stefanie Eckner, Martin Gnauck, Andreas Johannes, Tobias Steinbach, Helena Kämmer, Mark C. Ridgway, and Claudia S. Schnohr
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16:00 |
HL 93.2 |
Capture cross sections from first-principles total energy calculations for oxygen in GaP as benchmark case — •Ying Cui, Christoph Freysoldt, and Jörg Neugebauer
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16:15 |
HL 93.3 |
Effect of localized boron states on the conduction band transport in n-type (B,Ga)P — •Lars Ostheim, Steve Petznick, Sven Liebich, Kerstin Volz, Wolfgang Stolz, and Peter J. Klar
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16:30 |
HL 93.4 |
HR-XRD analysis on GaP rotational twin domains on Si(111) substrates — •Christian Koppka, Agnieszka Paszuk, Matthias Steidl, Katja Tonisch, and Thomas Hannappel
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16:45 |
HL 93.5 |
Growth of (Ga,In)(As,Bi) layers on GaAs, InP and GaSb substrates by Molecular Beam Epitaxy — •Wolfgang Bennarndt, Gerhard Böhm, and Markus-Christian Amann
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17:00 |
HL 93.6 |
Luminescence properties of green (InGaAl)P-GaP LED grown on different orientated GaAs substrates — •Sarah Schlichting, Nikolay N. Ledentsov, Vitaly A. Shukin, Jari Lyytikäinen, Oleg Okhotnikov, Yurri M. Shernyakov, Alexey S. Payusov, Nikita Gordeev, Michail V. Maximov, Felix Nippert, and Axel Hoffmann
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17:15 |
HL 93.7 |
Impact of growth temperature on structural and optical properties of GaAs quantum structures grown on GaP (100) substrate — •S. Dadgostar, J. Schmidtbauer, T. Boeck, M. Rodríguez, A. Torres, J. Jiménez, O. Martínez, W. T. Masselink, and F. Hatami
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17:30 |
HL 93.8 |
High-power 1060-mn photonic band crystal lasers with narrow beam divergence and low astigmatism — •Md. Jarez Miah, Thorsten Kettler, Kristijan Posilovic, Vladimir P. Kalosha, Danilo Skoczowsky, Dieter Bimberg, Johannes Pohl, and Markus Weyers
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