Berlin 2015 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 93: III-V semiconductors (other than nitrides)
HL 93.3: Talk
Thursday, March 19, 2015, 16:15–16:30, EW 203
Effect of localized boron states on the conduction band transport in n-type (B,Ga)P — •Lars Ostheim1, Steve Petznick1, Sven Liebich2, Kerstin Volz2, Wolfgang Stolz2, and Peter J. Klar1 — 1I. Physikalisches Institut, Justus-Liebig-Universtität Gießen, Germany — 2Department of Physics and Material Sciences Center, Phillips-Universität Marburg, Germany
(B,Ga)P:Te and GaP:Te samples are grown by MOVPE on a 300 nm GaP buffer layer under a Te-partial pressure of Te/Ga=5*10-4. While the incorporation of Te results in n-type doping of the samples, the incorporation of B into GaP leads to the formation of localized electronic states resonant with the conduction band. In order to investigate the influence of these localized states on the transport properties, magnetotransport measurements were performed in a temperature range from 1.5 K to 300 K and as a function of applied hydrostatic pressure up to 17 kbar using a non-magnetic pressure cell. The results obtained indicate that a boron-related density of localized states exists in the vicinity of the conduction band edge of the alloy, which act as electron traps as well as efficient scattering centers. By applying hydrostatic pressure the energetic positions of conduction band edge at the X-point and the localized boron states are shifted apart reducing the impact of boron on the electronic transport parameters of the alloy.