Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 93: III-V semiconductors (other than nitrides)

HL 93.5: Talk

Thursday, March 19, 2015, 16:45–17:00, EW 203

Growth of (Ga,In)(As,Bi) layers on GaAs, InP and GaSb substrates by Molecular Beam Epitaxy — •Wolfgang Bennarndt, Gerhard Böhm, and Markus-Christian Amann — Walter Schottky Institut, Garching

The incorporation of Bi in III/V semiconductor alloys results in a strong band gap reduction and therefore has attracted considerable interest for long-wavelength optoelectronic applications. Theoretical calculations even revealed a negative band gap for the binary materials GaBi and InBi, which means that layers with metallic character could be epitaxially grown and can in principal act as a waveguide for lasers emitting in the THz wavelength range. In this work we present incorporation studies of Bi into (Ga,In)As grown on GaAs, InP and GaSb by molecular beam epitaxy. Smooth layers with Bi-contents as high as 20% were successfully grown and characterized by XRD and PL-measurements. The influence of growth parameters on Bi-incorporation such as In content, strain, temperature and the flux ratio of the Group V elements will be discussed.