Berlin 2015 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 93: III-V semiconductors (other than nitrides)

HL 93.6: Vortrag

Donnerstag, 19. März 2015, 17:00–17:15, EW 203

Luminescence properties of green (InGaAl)P-GaP LED grown on different orientated GaAs substrates — •Sarah Schlichting¹, Nikolay N. Ledentsov², Vitaly A. Shukin², Jari Lyytikäinen³, Oleg Okhotnikov⁴, Yurri M. Shernyakov⁴, Alexey S. Payusov⁴, Nikita Gordeev⁴, Michail V. Maximov⁴, Felix Nippert¹, and Axel Hoffmann¹ — ¹TU Berlin, Germany — ²VIS GmbH, Germany — ³Tampere University of Technology, Finland — ⁴Russian Academy of Science, Russia

(Al_0.5Ga_0.5)_0.5In_0.5P−(Al_0.8Ga_0.2)_0.5In_0.5P LED with GaP barriers were investigated by means of EL and PL techniques. The structures were grown by MBE side-by-side on differently-oriented GaAs substrates: (100), (211) and (311). Through studies of the luminescence properties of the structures it was found that at room temperature at current densities of ∼500 A/cm² and below the EL intensity is similar for all substrates. A shift towards shorter wavelengths is observed for the structures grown on high-index GaAs substrates. For higher current densities (>1 kA/cm²) the (211) and (311)-orientated substrates show a much higher EL intensity compared to the GaAs(100) substrate. A gradually saturation of integrated intensity of the (311)-grown structure occurs at current densities above 4 kA/cm², such saturation is not visible for the (211)-grown structure even for current densities up to 14 kA/cm². This effect is attributed to self-organized superlattice formation[1] and the GaP insertion-induced engineering of the conduction band structure on high-index surfaces[2]. [1] N. Cherkashin et al., to be published [2] Appl. Phys. Lett. 105, 181902 (2014)