Berlin 2015 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 93: III-V semiconductors (other than nitrides)
HL 93.8: Talk
Thursday, March 19, 2015, 17:30–17:45, EW 203
High-power 1060-mn photonic band crystal lasers with narrow beam divergence and low astigmatism — •Md. Jarez Miah1, Thorsten Kettler1,2, Kristijan Posilovic1,2, Vladimir P. Kalosha1, Danilo Skoczowsky2, Dieter Bimberg1, Johannes Pohl3, and Markus Weyers3 — 1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany — 2PBC Lasers GmbH, Hardenbergstr. 36, 10623 Berlin, Germany — 3Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
High-power edge-emitting lasers are efficient and indispensable light sources for a wide range of scientific and commercial applications such as pump sources for solid-state lasers, frequency conversion, material processing, and medicine. High-power edge-emitting photonic band crystal lasers emitting in the commercially important 1060 nm wavelength range are investigated. Highest to date single transverse mode output power of 1.9 W is obtained from ridge waveguide lasers with 9 µm ridge width and 2.64 mm cavity length. Extended vertical waveguides result in a very narrow vertical far-field divergence below 14∘ (full width at half maximum) across full single mode operating regime. The corresponding lateral beam divergence is 9∘. The lasers provide excellent beam quality with beam quality factor M2 below 1.9 up to 1.9 W output power. A brightness as high as 72 MWcm−2sr−1 is achieved. The measured astigmatism varies only from 5 µm to 14 µm over the entire operating range, which means almost astigmatism-free.