Berlin 2015 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 94: Poster IV A (Laser; Devices; Heterostructures; Surfaces, interfaces and defects)
HL 94.11: Poster
Thursday, March 19, 2015, 14:00–20:00, Poster B
Photoluminescence and microstructure of porous silicon doped by gallium — •Mehrnoosh Naderi1, Wafaa Al-khayat2, and Gerhard Wilde1 — 1Institute of Materials Physics, University of Münster, Germany — 2Baghdad,Iraq
Silicon itself has been the most important and widely used variable semiconductor in silicon based optoelectronics. Crystalline silicon has an indirect band gap of 1.1 eV, which limits its application in optoelectronics while porous silicon (PSi), due to its recent discovery of visible light emission at room-temperature may open a new field combining Si integrated technology and optoelectronics. On the other hand, doping is the most widely used method in semiconductor materials to obtain the required properties. For fast optoelectronics applications, blue photoluminescence (PL) is important. However, this specific PL has been less investigated in doped-PSi materials. In this contribution, the results obtained on Ga doped n-type porous silicon is reported. The Ga doping process was carried out by physical vapour deposition. The surface morphology and microstructure was observed by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Photoluminescence measurements illustrate that the luminescence behavior of Ga-doped PSi changes strongly from the red to the blue part of the spectrum by Ga doping.