Berlin 2015 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 94: Poster IV A (Laser; Devices; Heterostructures; Surfaces, interfaces and defects)

HL 94.13: Poster

Donnerstag, 19. März 2015, 14:00–20:00, Poster B

Continuous composition spread method for amorphous zinc-tin-oxide — •Sofie Bitter, Peter Schlupp, Heiko Frenzel, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Institut für ExperimentellePhysik II, Germany

Amorphous zinc-tin-oxide (ZTO) is a close-to-ideal candidate for low cost transparent devices. It consists of naturally abundant, non-toxic materials only and can be deposited at room temperature. It was shown that electron densities as high as 10¹⁹ cm⁻³ and mobilities as high as 10 cm²/Vs are possible [1]. With that ZTO is a suitable material for transparent transistors and thus for transparent electronic applications.

It is of great interest to acquire knowledge about the optimal Zn/Sn ratio in order to tune electrical and optical properties as desired. Up to now, only a few different Sn/Zn ratios were realized experimentally [2]. We present ZTO thin films deposited by pulsed laser deposition using a method of continuous composition spread (ccs) [3] and a ccs thin film produced by co-sputtering. The films were deposited on 50 × 50 mm² glass substrates. Using energy dispersive X-ray analysis the spatial dependence of the Zn/Sn ratio was mapped. Subsequently the samples were divided along the compositional gradient into stripes and their electrical and optical properties were compared. Both types of properties show a systematic dependence on the Zn/Sn ratio.

[1] Jayaraj et al. J. Vac. Sci. Technol. B, 26(2) 2008

[2] Görrn et al. Applied Physics Letters, 91 , 193504 (2007)

[3] von Wenckstern et al. , CrystEngComm, 15, 100 20, 2013