Berlin 2015 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 94: Poster IV A (Laser; Devices; Heterostructures; Surfaces, interfaces and defects)
HL 94.7: Poster
Thursday, March 19, 2015, 14:00–20:00, Poster B
Junction FETs based on n-ZnO/p-NiO heterojunctions — •Robert Karsthof, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig
In this work we present junction field-effect transistors (JFETs) based on an n-ZnO channel with p-NiO as gate material. The band gaps of both semiconductors lie in the UV spectral range, thus enabling the realization of visibly-transparent devices and subsequent application in electronic circuits, e.g. for transparent displays.
Both ZnO and NiO were deposited by the pulsed laser deposition (PLD) method. We investigated the influence of the channel layer thickness on the on-voltage, current on-off ratio, and sub-threshold slope of the transfer characteristics of our devices, and we show that by decreasing the ZnO thickness from 80 to 9.2 nm, the switching behavior of the transistors can be shifted from ’normally on’ to ’normally off’. The best room-temperature values for current on-off ratio and sub-threshold slope were 3× 107 and 67 mV/dec, respectively. We also investigated the influence of temperature on the device characteristics in the range between -20∘C and 150∘C.