Berlin 2015 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 95: Poster IV B (Quantum dots and wires: Prepration, characterization, optical properties, and transport)

HL 95.11: Poster

Thursday, March 19, 2015, 14:00–20:00, Poster B

Single-Photon Emission of MOVPE-grown InGaAs-Quantum Dots at Telecom Wavelengths — •Katharina Zeuner, Fabian Olbrich, Jan Kettler, Matthias Paul, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Allmandring 3, 70569 Stuttgart, Deutschland

Semiconductor quantum dots (QDs) are promising candidates to be employed as single-photon sources for fiber-based communication networks. Although already established by molecular beam epitaxy (MBE), it has been challenging to achieve metal organic vapor phase epitaxy (MOVPE)-grown low-density InAs QDs with emission wavelengths suitable for widespread optical glass fibers.

In this contribution, we report on low-density MOVPE-grown InGaAs-QDs that are assembled on a GaAs substrate and on top of a 15-pair AlAs/GaAs distributed Bragg reflector (DBR). We demonstrate single-photon emission at the telecom O-band (1.3 µm). Furthermore, we investigate time-resolved and polarization-dependent photoluminescence to give an estimation of carrier lifetimes and fine-structure splittings.