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HL: Fachverband Halbleiterphysik

HL 95: Poster IV B (Quantum dots and wires: Prepration, characterization, optical properties, and transport)

HL 95.14: Poster

Donnerstag, 19. März 2015, 14:00–20:00, Poster B

Temperature-dependent quantum optical properties of In(Ga)As quantum dots with emission wavelength above 1µm — •Fabian Olbrich, Katharina Zeuner, Jan Kettler, Matthias Paul, Michael Jetter, and Peter Michler — Universität Stuttgart, Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG), Allmandring 3, 70569 Stuttgart

Promising single photon sources for the realization of fiber-based quantum communication networks are provided by semiconductor quantum dots (QDs). For this purpose QDs with emission wavelengths above 1 µm, in this case targeting the telecom O-band (1,3 µm), would provide the advantage of minimal absorption and dispersion of the transmitted signal.

Furthermore for the implementation of these QDs, an operation at higher temperatures is desirable, because of the reduced amount of required cooling and simpler handling.

In this work we study (quantum) optical properties of long-wavelength In(Ga)As-QDs at elevated temperatures such as the spectral behaviour, e.g. spectral broadening or the addressability of a single QD, the single photon emission via cw autocorrelation measurements and time-correlated photon counting measurements to gather information about decay times and refilling effects.