Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 95: Poster IV B (Quantum dots and wires: Prepration, characterization, optical properties, and transport)

HL 95.1: Poster

Thursday, March 19, 2015, 14:00–20:00, Poster B

Nanowire junctions grown on Si substrates — •Daniil Vakulov, Torsten Rieger, Sebastian Heedt, Daniel Rosenbach, Mihail Ion Lepsa, Thomas Schäpers, and Detlev Grützmacher — Peter Grünberg Institute (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich, 52425 Jülich, Germany

Nowadays nanowire junctions are attracting much attention due to many reasons, for example the search of Majorana fermions. We present the growth, structural characteristics and room temperature transport measurements of these junctions. InAs nanowires have been grown without the use of Au catalysts on Si (100) substrates patterned with V-grooves. The V-grooves have been produced by KOH etching. The nanowires grow perpendicular to the {111} side facets of the V-grooves. When two nanowires are grown on opposing V-groove facets, they can cross, grow together and form a nanowire junction. In this case three different basic configurations of nanowire junctions are obtained: a tip-to-tip junction (L-shape), tip-to-side junction (T-shape) and a side-to-side junction (X-shape). The junctions exhibit a uniform crystal structure. They have zinc blende crystal structure while the remaining parts of the nanowires show the expected high density of stacking faults. Preliminary room temperature transport measurements demonstrate that the resistivity across the junctions is similar to the resistivity of single InAs nanowires. The results demonstrate the excellent suitability of Au-free nanowire junctions for future nanoelectronic devices.