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HL: Fachverband Halbleiterphysik

HL 95: Poster IV B (Quantum dots and wires: Prepration, characterization, optical properties, and transport)

HL 95.2: Poster

Donnerstag, 19. März 2015, 14:00–20:00, Poster B

Growth of site-controlled InAs nanowires induced by focused ion beam — •Sven Scholz, Rüdiger Schott, Arne Ludwig, and Andreas D. Wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum

We have grown single localized Au seeded InAs NWs on GaAs(111)B substrate by molecular beam epitaxy, to investigate the morphology, structure and behavior of individual one-dimensional nanostructures, so called nanowires (NWs). The Au-seeds are implanted by focused ion beam (FIB) technology. Optimizing the growth process due to the growth parameter and material we were able to create monocristalline NWs with nearly no stacking faults and on the other hand control the morphology down to a region of 20 nm in diameter. Furthermore we investigate the axial and radial growth of heterostructures in our NWs, which leads to a promising approach for band gap modulation in single NWs. We studied the morphology of the NWs by SEM imaging and the crystalline structure with TEM imaging.