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HL: Fachverband Halbleiterphysik

HL 95: Poster IV B (Quantum dots and wires: Prepration, characterization, optical properties, and transport)

HL 95.3: Poster

Donnerstag, 19. März 2015, 14:00–20:00, Poster B

Focused ion beam induced growth of single GaAs nanowires on arbitrarily arranged sites — •Rüdiger Schott, Sven Scholz, Arne Ludwig und Andreas D. Wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum

Semiconductor nanowires (NWs) are used as building blocks for a new generation of advanced devices intended for different applications in the field of nanoelectronics, nanophotonics and nanomechanics. NWs are near one-dimensional structures that typically have a high length-to-width ratio. This is the base of fascinating structural properties. Heterostructures of highly lattice mismatched materials can be combined without dislocations and metastable phases, unattainable in bulk materials like wurtzite GaAs, are feasible. We present focused ion beam (FIB) induced molecular beam epitaxy (MBE) grown single GaAs nanowires from site selectively deposited Au seeds. The possibility of maskless patterning makes focused ion beam lithography a powerful tool and an alternative to conventional lithography based methods in semiconductor processing. With an FIB system, equipped with an ExB filter and a liquid metal alloy ion source (LMAIS), most of the elements of the periodic table are accessible for ion implantation and patterning. Structural and optical properties of the nanowires are investigated by secondary electron microscopy, transmission electron microscopy, X-ray diffraction and photoluminescence spectroscopy.