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HL: Fachverband Halbleiterphysik

HL 95: Poster IV B (Quantum dots and wires: Prepration, characterization, optical properties, and transport)

HL 95.4: Poster

Donnerstag, 19. März 2015, 14:00–20:00, Poster B

Focused ion beam patterning of Si substrate for the growth of GaAs nanowires — •danial bahrami¹, heiko schäfer-eberwein², hanno küpers³, faebian bastiman³, lutz geelhaar³, and ullrich pietsch¹ — ¹University of Siegen, Solid State physics, Siegen, Germany — ²University of Siegen, Electronic and Information department, Siegen, Germany — ³Paul Drude Institut für Festkörperelektronik, Berlin, Germany

Semiconductor nanowires (NWs) have been employed as light emitting diodes, transistors, anti-reflecting coating and other applications. For all of these applications, it is demanding to control density and position of NWs in a technically and economically efficient way. In most cases, NWs growth in Molecular Beam Epitaxy (MBE) onto silicon (111) substrates is realized onto a thin native silicon oxide throughout native openings providing a random distribution of NWs. Here we report on results of patterning the silicon substrates using a Focused Ion Beam (FIB) technique to define nucleation sites for further NWs growth. In particular, we created a 2D dot pattern of 1μm spacing. Optimum conditions for NWs growth are achieved by changing dose of the Gallium ions implantation. Implantation depth and the shape of implantation dots have been inspected by SEM and compared with the results of MBE NWs growth.