Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 95: Poster IV B (Quantum dots and wires: Prepration, characterization, optical properties, and transport)

HL 95.5: Poster

Thursday, March 19, 2015, 14:00–20:00, Poster B

Site-controlled InAs quantum dots on pre-patterned GaAs substrates: Growth and characterizations — •Patrick Krawiec, Mohammed Usman, Johann Reithmaier, and Mohamed Benyoucef — Institute of Nanostructure Technologies and Analytics (INA), Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Germany

The selective epitaxial growth through the use of the seeded self-ordering technique leads to the formation of quantum dots (QDs) at determined nucleation sites. Here, we present the fabrication and characterization of site-controlled (SC) InAs QDs on pre-patterned GaAs substrates. The nanoholes on GaAs substrate were obtained using electron beam lithography (EBL). The growth of SCQDs was realized by solid-source molecular beam epitaxy. Highly ordered InAs QDs with periodicities ranging from 0.5 µm to 4 µm and negligible dot formation between the nanoholes are realized. Relatively narrow light emission from single SCQDs down to 150 µeV is measured by micro-photoluminescence.