Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 95: Poster IV B (Quantum dots and wires: Prepration, characterization, optical properties, and transport)

HL 95.6: Poster

Thursday, March 19, 2015, 14:00–20:00, Poster B

Altering the luminescence properties of self-assembled quantum dots in GaAs by focused ion beam implantation — •Charlotte Rothfuchs, N. Kukharchyk, Markus K. Greff, Arne Ludwig, and Andreas D. Wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum

In the growing field of quantum information and technology there is an increasing demand on semiconductor quantum structures. Especially single quantum dots (QD) were shown to be promising for the generation of single photons for quantum information processes [1]. Thus, there is a need for the controlled fabrication of those QDs. One approach is the combination of molecular beam epitaxy (MBE) and focused ion beam (FIB) implantation. While the former enables the growth of well-defined self-assembled quantum dots in great quantity [2], FIB implantation is on the one hand shown to be a suitable method to initialize a site-selective growth of QDs [3]. On the other hand it could be a proper method for the post-selecting of the latter. We anticipate the mechanism for eliminating QD luminescence by introducing lattice disorders in the irradiated regions. As a first approach, we present a study on the parameter space allowing the alteration of QD luminescence in GaAs by FIB implantation. Different sets of ion species, their energies and fluences are investigated by photoluminescence measurements on the QDs before and after FIB implantation.

[1] I. Robert-Philip et al., J. Lumin. 102-103, 67-71, (2003).

[2] D. Reuter et al., Physica E 40(6), 1961-1964, (2008).

[3] M. Mehta et al., Physica E 40, 2034-2036, (2008).