Berlin 2015 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 96: Poster III C (III-V Semiconductors incl. Nitrides)
HL 96.1: Poster
Donnerstag, 19. März 2015, 14:00–20:00, Poster B
Use of In-Plane-Gate transistors for sensing of dielectrics — •Benjamin Gerd Feldern, Arne Ludwig, and Andreas Dirk Wieck — Angewandte Festkörperphysik, Ruhr Universität Bochum, Germany
The Idea of this work is to examine the ability of In-Plane Gate field effect transistors (IPG-FET)[1] based on GaAs/AlxGa1−xAs to sense dielectrics and to determine the dielectric function from the measurements. The work is motivated by the observation that organic IPG-FETs were shown to be able of sensing different organic molecules[2]. The change of the transconductance on presence of dielectrics is supposed from the shielding of the electric field between gate and source contact. This is assumed from polarization of the molecules due to the electric field. Additionally, an ac-gate-source field might be able to excite resonant modes of the molecule, thus leading to additional polarization. The measurements shown address the question of effect of an ac-gate voltage in the kHz region.
[1] J. Nieder, A D. Wieck, P. Grambow, H. Lage, D. Heitmann, K. v. Klitzing, and K. Ploog, "One-dimensional lateral field-effect transistor with trench gate-channel insulation", Appl. Phys. Lett . 57, 2695 (1990). [2] J. Kettle, S. Whitelegg, A.M. Song, D.C. Wedge, L. Kotacka, V. Kolarik, M.B. Madec, S.G. Yeates, and M.L. Turner; Nanotechnology 21 075301 (2010).