Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 96: Poster III C (III-V Semiconductors incl. Nitrides)

HL 96.10: Poster

Thursday, March 19, 2015, 14:00–20:00, Poster B

Effects of rapid thermal annealing on the disorder and composition of Ga(N,As,P) quantum wells on silicon for laser application — •Sebastian Gies, Sarah Karrenberg, Martin Zimprich, Tatjana Wegele, Andreas Beyer, Wolfgang Stolz, Kerstin Volz, and Wolfram Heimbrodt — Faculty of Physics and Material Science Center, Philipps University Marburg, D-35032 Marburg, Germany

Realizing suitable light sources for optical data transmission on silicon is one of the major goals of optoelectronic integration nowadays. The quaternary Ga(N,As,P) is a promising candidate for this. Here, we present an analysis of the annealing effects on Ga(N,As,P) quantum wells (QWs) on silicon using PL, PL excitation and raman spectroscopy as well as transmission electron microscopy (TEM). The growth was performed using metal-organic vapor-phase epitaxy. After growth the samples underwent rapid thermal annealing for ten seconds at annealing temperatures between 800 °C and 1000 °C. Combining PL and raman spectroscopy an As-P-exchange could be revealed. Furthermore, we could quantify this exchange by conjunction of PLE experiments and QW calculations to be 5-10% at highest annealing temperatures. To further analyze the interplay of removing defects by annealing and creating new ones by As-P-exchange we studied the disorder of the Ga(N,As,P) QW. A two scaled disorder common for these materials was found. The behavior of the disorder was compared with the QWs morphology obtained by TEM measurements.