Berlin 2015 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 96: Poster III C (III-V Semiconductors incl. Nitrides)
HL 96.13: Poster
Thursday, March 19, 2015, 14:00–20:00, Poster B
Spectroscopic characterization of Lanthanide-doped AlN and AlInN — •Sebastian Bauer1, Miao Yang2, Niklas Bayrle1, Murat Yildirim1, Matthias Hocker1, Horst P. Strunk2, and Klaus Thonke1 — 1Institute of Quantum Matter / Semiconductor Physics Group, University of Ulm, 89081 Ulm, Germany — 2Institute of Materials Science, Chair of Materials Physics, University of Stuttgart, 70569 Stuttgart, Germany
Radiative electron transitions in the 4f shell of rare earth ions are of great interest for applications in optoelectronics as temperature-stable emitters of sharp spectral lines. Due to the wide band gap of the host semiconductor AlN, a wide range of the rare earth internal transitions is accessible.
We investigate polycrystalline rare earth doped AlN and AlInN layers with grain sizes in the nanometre regime. They were deposited by magnetron co-sputtering on Si(100) substrates, and doped with Praseodymium, Neodymium, Samarium, Terbium, and Thulium. The emission features recorded in temperature dependent photoluminescence using above or below bandgap excitation are assigned to their corresponding 4f states split by the hexagonal crystal field. Despite the polycrystalline nature of the samples, line widths below 0.5 nm were observed in the spectra. Furthermore, the influence of indium as a constituent in the host crystal, and of different annealing processes applied after deposition is discussed.