Berlin 2015 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 96: Poster III C (III-V Semiconductors incl. Nitrides)
HL 96.14: Poster
Thursday, March 19, 2015, 14:00–20:00, Poster B
Combined and spatially correlated measurements by SEM-CL and EBIC on semiconductor microstructures — •Manuel Knab1, Matthias Hocker1, Ingo Tischer1, Pascal Maier1, Junjun Wang2, Ferdinand Scholz2, and Klaus Thonke1 — 1Institute of Quantum Matter/Semiconductor Physics Group, University of Ulm — 2Institute of Opotoelectronics, University of Ulm
Among the crucial aspects for the successful realization of semiconductor-based light emitting diodes is the quality of both the pn-junction and the quantum well. The cathodoluminescence (CL) measurement technique provides important information about the radiative recombination in the semiconductor structure, especially in the quantum well. With the electron beam induced current (EBIC) setup we are able to gain access to the pn-junction quality. Both measurement techniques are applied in a scanning electron microscope yielding high spatial resolution. The investigations were performed on the identical spot of semipolar InGaN/GaN microstructures. The results show both correlation and anti-correlation of the respective signal intensities. These are discussed regarding the crystal quality, the quality of the pn-junction and of the quantum well. In conclusion we can provide a powerful tool for the analysis of the light emitting diode structures by the combination of CL and EBIC.