Berlin 2015 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 96: Poster III C (III-V Semiconductors incl. Nitrides)
HL 96.17: Poster
Thursday, March 19, 2015, 14:00–20:00, Poster B
Experimental verification of electron scattering simulations for depth-resolved cathodoluminescnece — •Matthias Hocker1, Pascal Maier1, Ingo Tischer1, Oliver Rettig1, Robert A.R. Leute2, Kamran Forghani2, Ferdinand Scholz2, and Klaus Thonke1 — 1Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, Ulm, Germany — 2Institute of Optoelectronics, University of Ulm, Ulm, Germany
Scanning electron microscope cathodoluminescence (SEM-CL) has a high lateral resolution. However, the depth of the origin of the luminescence signal cannot be determined directly. By varying the primary electron (PE) energy and comparing the measurement results with Monte Carlo simulations of the PE scattering process inside the semiconductor material, depth-resolved SEM-CL measurements are possible. We applied this investigation method to different nitride semiconductor layer systems. In order to verify the validity of the simulation model, cross sectional SEM-CL measurements were perfomed as well.