Berlin 2015 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 96: Poster III C (III-V Semiconductors incl. Nitrides)
HL 96.23: Poster
Thursday, March 19, 2015, 14:00–20:00, Poster B
C-doped GaN buffer layers with CBr4, C3H8 and Fe-doped GaN for breakdown voltage enhancement of HEMTs — •Andreas Lesnik, Jonas Hennig, Armin Dadgar, Jürgen Bläsing, Hartmut Witte, and Andrè Strittmatter — Institut für Experimentelle Physik / Abteilung Halbleiterepitaxie, Otto-von-Guericke-Universität Magdeburg
We investigated C-doped and Fe-doped GaN buffer layers grown on Si (111) substrates using metalorganic vapour-phase epitaxy (MOVPE). For the intentional C-doping a high purity 10% propane in hydrogen mixture and carbon tetrabromide (CBr4) were used as precursors. For Fe-doping ferrocene was used as iron source. Secondary ion mass spectroscopy measurements were performed to quantify the incorporation behaviour of carbon and iron. X-ray diffraction and atomic force microscopy (AFM) were used to characterize the structural quality of the buffer layers. The horizontal and vertical buffer breakdown voltage in dependence of carbon and iron incorporation was investigated.