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HL: Fachverband Halbleiterphysik

HL 96: Poster III C (III-V Semiconductors incl. Nitrides)

HL 96.4: Poster

Donnerstag, 19. März 2015, 14:00–20:00, Poster B

Optical properties of Bi-containing nanostructures on GaAs — •Julian Veletas, Nils Rosemann, Lukas Nattermann, Kerstin Volz, and Sangam Chatterjee — Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany

Incorporating bismuth (Bi) into well studied GaAs-based devices leads to a promising way of tuning the band gap to telecom wavelength. Because of the large covalent radius of Bi the incorporation into the GaAs lattice is hindered and it tends to form nanoscaled structures at the substrate surface. Due to their metallic character these structures show interesting properties e.g., strong plasmonic effects. To investigate those nanostructures, we studied a series of Bi-containing nanostructures grown on GaAs substrates using photo modulated reflection spectroscopy.