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HL: Fachverband Halbleiterphysik
HL 96: Poster III C (III-V Semiconductors incl. Nitrides)
HL 96.6: Poster
Donnerstag, 19. März 2015, 14:00–20:00, Poster B
Optical properties of GaN and InGaN/GaN microrods — •Christian Tessarek1, George Sarau1, Martin Heilmann1, Robert Röder2, Carsten Ronning2, and Silke Christiansen1,3 — 1Max-Planck-Institut für die Physik des Lichts, Erlangen — 2Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena — 3Helmholtz Zentrum Berlin für Materialien und Energie
Self-assembled GaN microrods on sapphire substrates have been grown by metal-organic vapor phase epitaxy. The smooth and straight sidewall facets and the regular hexagonal shape of the rods facilitate the use as microresonators. Respective whispering gallery modes (WGMs) can be observed in cathodo- (CL) and photoluminescence (PL) investigations [1].
A route towards an improvement of the optical activity in the GaN near band edge emission range will be discussed. Excitation density dependent PL investigations will show lasing activity in these microrods between 365 and 380 nm [2].
Finally, optical properties of GaN microrods covered with InGaN quantum wells (QWs) will be presented. An emission wavelength gradient along the microrod can be observed in spatially resolved CL measurements. The InGaN emission in the range between 400 and 500 nm is in superposition with WGMs having quality factors up to 1200.
[1] C. Tessarek et al., Opt. Express 21, 2733 (2013).
[2] C. Tessarek et al., ACS Photonics 1, 990 (2014).