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HL: Fachverband Halbleiterphysik

HL 98: Nitrides: Bulk material, films, surfaces and quantum wells

HL 98.8: Vortrag

Freitag, 20. März 2015, 11:30–11:45, EW 201

Investigation of the optical properties of Zn doped GaN/AlGaN quantum wells for future single photon applications — •Johannes Dühn¹, Matin Mohajerani², Xue Wang², Andreas Waag², Kathrin Sebald¹, and Jürgen Gutowski¹ — ¹Institute for Solid State Physics, University of Bremen, Germany — ²Institute for Semiconductor Technology, Technical University of Braunschweig, Germany

Efficient single photon sources are a fundamental requirement for experimental quantum optics and cryptography. Established single photon sources often provide low intensities and have to be operated at cryogenic temperatures. A promising approach to this problem is the usage of bound excitons in wide-band-gap materials, because they possess large exciton binding energies and are therefore applicable at elevated temperatures. The position of the bound exciton emission is only determined by the type of defect and the emission exhibits a narrow line width, as it is favourable for device applications. In this work we investigate the micro-photoluminescence of a quantum well of zinc doped GaN embedded in AlGaN. Incorporation of zinc dopants is proven by identifying the acceptor bound exciton emission line at 3.455eV. To reveal the properties of individual emitters we investigate the luminescence properties of mesa etched structures on the sample. The single-photon properties of these emitters will be characterised by using a Hanbury-Brown-Twiss interferometer.