Berlin 2015 – scientific programme

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KR: Fachgruppe Kristallographie

KR 3: Poster Session on Ferroic Domain Walls - Multiferroics (DF jointly with KR, MA, TT)

KR 3.16: Poster

Monday, March 16, 2015, 19:00–21:00, Poster C

Control of the magnetic properties of magnetostrictive thin films by crossing the phase transition on a Mott insulator — S. Finizio¹, A. Fantini^1,2, •T. Lenz¹, M.V. Khanjani¹, S. Altendorf^2,3, D. Passarello², S.S.P. Parkin², and M. Kläui¹ — ¹Institut für Physik, Universität Mainz, Mainz, Germany — ²IBM Almaden Research Center, San Jose, CA, USA — ³Max-Planck-Institut für Mikrostrukturphysik, Halle, Germany

The study of strongly correlated materials such as the Mott insulator VO₂ has recently attracted interest, due to the possibility of manipulating materials properties on ultrafast timescales. VO₂, in particular, has been object of attention as a metal-insulator-transition (MIT) from an insulating monoclinic phase to a conducting rutile phase occurs at accessible temperatures just above RT. These changes in crystalline order within the MIT induce strain at the interface. Combined with magnetostrictive materials such as Ni, the MIT of VO₂ is exploited to study the dynamics of the magneto-elastic coupling. Here, we present MOKE and SQUID magnetometry studies of the influence of the MIT of VO₂ on the magnetic properties of a Ni thin film. VO₂ thin films were heteroepitaxially deposited by pulsed-laser-deposition on (100) TiO₂ substrates, onto which Ni film were deposited by thermal evaporation. The magnetic properties of the Ni thin films were then determined upon thermally crossing the MIT. Our results show that strong changes in the magnetic anisotropy of the Ni films occur upon crossing the MIT leading to changes in the switching fields and characteristics as needed for ultra-fast strain-induced switching.