Berlin 2015 – scientific programme
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KR: Fachgruppe Kristallographie
KR 3: Poster Session on Ferroic Domain Walls - Multiferroics (DF jointly with KR, MA, TT)
KR 3.2: Poster
Monday, March 16, 2015, 19:00–21:00, Poster C
Advanced characterization of functional ferroelectric domain walls by X-ray photoelectron emission microscopy — •Jakob Schaab1, Ingo P. Krug2,3, Zewu Yan4, Edith Bourret4, Claus M. Schneider3, Ramamoorthy Ramesh4,5, Manfred Fiebig1, and Dennis Meier1 — 1Department of Materials, ETH Zürich — 2Institut für Optik und Atomare Physik, TU Berlin — 3Forschungszentrum Jülich, PGI-6 — 4Materials Science Division, LBNL Berkeley — 5Department of Materials Science and Engineering, UC Berkeley
The observation of anomalous electronic transport at ferroelectric domain walls and its significance for nano-electronics triggered tremendous scientific interest. To date, the transport behavior and potential barriers at domain walls have been predominantly scrutinized by scanning probes. This, however, convolutes the intrinsic electronic properties with contact resistance and inhomogeneous probe fields, so that the detailed origin of the behavior remains obscured.
Here, we report on the capability of high-resolution X-ray photoemission electron microscopy (X-PEEM) to image and characterize ferroelectric domain walls contact-free and with nanometer resolution. In the ferroelectric semiconductor ErMnO3, we visualize ferroelectric domain walls by exploiting photo-induced charging effects and generate an electronic conduction map by analyzing the kinetic energy of photoelectrons. With this we open a pathway for non-destructive and element-specific studies of electronic and chemical domain-wall structures bypassing previous experimental limitations and significantly expanding the accessible parameter space.