Berlin 2015 – scientific programme
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KR: Fachgruppe Kristallographie
KR 3: Poster Session on Ferroic Domain Walls - Multiferroics (DF jointly with KR, MA, TT)
KR 3.5: Poster
Monday, March 16, 2015, 19:00–21:00, Poster C
Laser induced poling inhibition of LiNbO3 using an amorphous Si absorber — Grigoris Zisis1, Gregorio Martinez-Jimenez1, Yohann Franz1, Noel Helay1, David Grech2, Harold Chong2, Elisabeth Soergel3, Anna Peacock1, and •Sakellaris Mailis1 — 1Optoelectronics Research Centre, University of Southampton, Highfield, Southampton, SO17 1BJ, U.K. — 2School of Electronic and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, U.K. — 3Institute of Physics, University of Bonn, Wegelerstrasse 8, 53115 Bonn, Germany
Here we demonstrate laser-induced inhibition of poling in lithium niobate by irradiating a thin absorbing layer of amorphous Si, deposited on the surface of the crystal. The absorption of a-Si in the visible range is sufficiently high to produce significant temperature gradients in the substrate causing a local change in the stoichiometry of the crystal, which in turn modifies the coercive field locally.
This arrangement enables domain engineering using readily available visible laser sources instead of costly and power limiting UV lasers which were previously used to obtain inhibition of poling in this material.
Examination of the topography and piezoresponse of the PI domains, which are formed using this laser assisted method shown a "soft" domain boundary where the domain wall is not sharp but rather consists of isolated nano-domains whose density and size is a function of the distance from the centre of the laser irradiated track.